Title :
High performance strained and DH Ga1-xInxP/In 0.2Ga0.8As/GaAs HEMTs grown by solid-source MBE using valved cracker cells
Author :
Yoon, S.F. ; Gay, B.P. ; Zheng, H.Q. ; Kam, H.T. ; Degenhardt, J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
Double heterojunction (DH) In0.48Ga0.52P/In 0.20Ga0.80As and strained single heterojunction (SSH) In0.40Ga0.60P/In0.20Ga0.80 As/GaAs high electron mobility transistor (HEMT) structures were grown by solid-source molecular beam epitaxy (SSMBE) using a valved phosphorus cracker cell. The DC and RF performance of the SSH-HEMT and DH-HEMT were compared with the single heterojunction (SH) HEMT. The results show a significant improvement in device characteristics in the SSH-HEMT with In0.40Ga0.60P spacer and Schottky layer, due to better carrier confinement in the channel. The SSH-HEMT with 0.35-μm gate length exhibits a peak transconductance (Gm ) of 470 mS/mm, maximum drain current (IDSmax) of 550 mA/mm, and current gain cut-off frequency (fT) of 50 GHz. These values are approximately 7%, 10% and 25% higher than the respective values for a DH-HEMT of identical gate length
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; DC characteristics; DH-HEMT; Ga1-xInxP/In0.2Ga0.8 As/GaAs HEMT; In0.40Ga0.60P-In0.20Ga0.80 As-GaAs; In0.48Ga0.52P-In0.20Ga0.80 As; RF characteristics; SSH-HEMT; Schottky layer; carrier confinement; double heterojunction; solid-source MBE growth; spacer layer; strained single heterojunction; valved cracker cell; Carrier confinement; Cutoff frequency; DH-HEMTs; Gallium arsenide; HEMTs; Heterojunctions; MODFETs; Molecular beam epitaxial growth; Radio frequency; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850248
