DocumentCode :
2123211
Title :
Characterization of low temperature transport properties in InP/InGaAs double heterojunction bipolar transistors
Author :
Wang, Hong ; Ng, Geok Ing
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fYear :
2000
fDate :
2000
Firstpage :
138
Lastpage :
141
Abstract :
Low temperature transport properties of InP/InGaAs double heterojunction bipolar transistors (DHBTs) have been carefully investigated. The mechanisms for the devices operating in different temperature range have been clearly identified. The base current in the temperature range of 240 to 300 K is dominated by electron-hole band-to-band recombination and trap related recombination. In the temperature range of 77 K to 240 K, trap related recombination mechanism plays a important role in determining the base current. For temperature lower than 77 K, both collector and base currents are found to be limited by the electron tunneling through the barrier formed by conduction-band discontinuity at E-B junction
Keywords :
III-V semiconductors; cryogenic electronics; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; indium compounds; tunnelling; 77 to 300 K; InP-InGaAs; InP/InGaAs double heterojunction bipolar transistor; base current; collector current; electron tunneling; electron-hole band-to-band recombination; low temperature transport; trap related recombination; Cryogenics; Degradation; Double heterojunction bipolar transistors; Electron traps; Indium gallium arsenide; Indium phosphide; Spontaneous emission; Superconducting microwave devices; Temperature dependence; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
ISSN :
1092-8669
Print_ISBN :
0-7803-6320-5
Type :
conf
DOI :
10.1109/ICIPRM.2000.850251
Filename :
850251
Link To Document :
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