• DocumentCode
    2123359
  • Title

    Zn+/P+ and Zn+/As+ co-implantation in InP single crystals

  • Author

    Ursaki, V.V. ; Tiginyanu, I.M. ; Ichizli, V.M. ; Terletsky, A.I. ; Pyshnaya, N.B. ; Radautsan, S.I.

  • Author_Institution
    Inst. of Appl. Phys., Kishinev, Russia
  • Volume
    2
  • fYear
    1996
  • fDate
    9-12 Oct 1996
  • Firstpage
    401
  • Abstract
    The activation efficiency of zinc impurity co-implanted with P+ and As+ ions in InP was studied by Hall-effect measurements. Both P+ and As+ co-implantations followed by post-implantation annealing at 400 to 600°C in InP single crystals have been found to result in a decrease of impurity activation. At the same time an improvement of activation efficiency was observed at annealing temperatures Tann>600°C
  • Keywords
    Hall effect; III-V semiconductors; annealing; arsenic; indium compounds; ion implantation; phosphorus; zinc; 400 to 600 C; Hall-effect measurement; InP single crystals; InP:Zn,As; InP:Zn,P; InP:Zn+,As+ co-implantation; InP:Zn+,P+ co-implantation; activation efficiency; annealing temperature; impurity activation; post-implantation annealing; Annealing; Atmospheric measurements; Charge carrier processes; Conductivity; Crystals; Gallium arsenide; Impurities; Indium phosphide; Temperature; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1996., International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3223-7
  • Type

    conf

  • DOI
    10.1109/SMICND.1996.557405
  • Filename
    557405
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2123359