Title :
Epitaxial growth by low pressure chemical vapour deposition of Si 1-xGex/Si and applications
Author :
Vescan, L. ; Goryll, M. ; Grimm, K. ; Wickenhauser, S. ; Stoica, T.
Author_Institution :
Inst. fur Schicht- und Ionentech., Forschungszentrum Julich GmbH, Germany
Abstract :
Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation, nanostructures by lateral confinement with facets, increase of the critical thickness in finite pads, 2D to 3D growth transition and application to light emitting diodes with room temperature operation will be presented
Keywords :
Ge-Si alloys; elemental semiconductors; light emitting diodes; semiconductor growth; semiconductor heterojunctions; semiconductor materials; silicon; vapour phase epitaxial growth; Si1-xGex/Si; SiGe-Si; critical thickness; epitaxial growth; facet formation; lateral confinement; light emitting diodes; low pressure chemical vapour deposition; microelectronics; nanostructures; optoelectronics; room temperature operation; Chemical vapor deposition; Epitaxial growth; Germanium silicon alloys; Hydrogen; Inductors; Microelectronics; Nanostructures; Silicon germanium; Temperature; Water pollution;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651223
