Title :
High power efficiency AlGaAs-GaAs HBT for mobile communications
Author :
Pinatel, C. ; Vuye, S. ; Konczykowska, A. ; Wang, H.
Author_Institution :
FRANCE TELECOM, Centre National d´´Etudes des Télécommunications, Laboratoire de BAGNEUX, 196, Avenue Henri Ravera - BP 107, 92225 Bagneux cedex FRANCE
Abstract :
Different HBTs operating classes have been compared using a simulated multiharmonic load-pull type optimization taking into account the supply voltage criteria. The optimum operating class taking into account the power density and the thermal effect has been discussed. The low bias voltage operation of HBT has been investigated. An HBT amplifier has been designed and fabricated for DCS1800. 1 W output power with a power-added efficiency df 50% has been measured.
Keywords :
FETs; Heterojunction bipolar transistors; Impedance; Low voltage; Mobile communication; Power amplifiers; Power generation; Power measurement; Silicon; Thermal resistance;
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
DOI :
10.1109/EUMA.1994.337440
