• DocumentCode
    2123464
  • Title

    High quality fully relaxed In0.65Ga0.35As layers grown on InP using seed membranes

  • Author

    Damlencourt, J.F. ; Boudaa, M. ; Leclereq, J.L. ; Gendry, M. ; Regreny, P. ; Hollinger, G.

  • Author_Institution
    Ecole Centrale de Lyon, Ecully, France
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    178
  • Lastpage
    181
  • Abstract
    High structural and high optoelectronic quality In0.65Ga0.35As layers have been grown on InP substrates using the paramorphic approach. Full relaxation is achieved by growing the In0.65Ga0.35As layers lattice matched to an InAs0.25P0.75 seed membrane of predetermined lattice parameter. The InAs0.25P0.75 seed membrane, originally grown pseudomorphically strained on the InP substrate coated with a sacrificial layer, is separated by chemical etching from its original substrate and subsequently deposited on the bottom substrate after being elastically relaxed
  • Keywords
    Gallium arsenide; III-V semiconductors; Indium compounds; Molecular beam epitaxial growth; Photoluminescence; Semiconductor epitaxial layers; Semiconductor growth; Stress relaxation; In0.65Ga0.35As; InAs0.25P0.75; InAs0.25P0.75 seed membrane; InP; InP substrates; MBE; fully relaxed layers; paramorphic approach; Biomembranes; Buffer layers; Capacitive sensors; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
  • Conference_Location
    Williamsburg, VA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6320-5
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2000.850261
  • Filename
    850261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2123464