Title :
High quality fully relaxed In0.65Ga0.35As layers grown on InP using seed membranes
Author :
Damlencourt, J.F. ; Boudaa, M. ; Leclereq, J.L. ; Gendry, M. ; Regreny, P. ; Hollinger, G.
Author_Institution :
Ecole Centrale de Lyon, Ecully, France
Abstract :
High structural and high optoelectronic quality In0.65Ga0.35As layers have been grown on InP substrates using the paramorphic approach. Full relaxation is achieved by growing the In0.65Ga0.35As layers lattice matched to an InAs0.25P0.75 seed membrane of predetermined lattice parameter. The InAs0.25P0.75 seed membrane, originally grown pseudomorphically strained on the InP substrate coated with a sacrificial layer, is separated by chemical etching from its original substrate and subsequently deposited on the bottom substrate after being elastically relaxed
Keywords :
Gallium arsenide; III-V semiconductors; Indium compounds; Molecular beam epitaxial growth; Photoluminescence; Semiconductor epitaxial layers; Semiconductor growth; Stress relaxation; In0.65Ga0.35As; InAs0.25P0.75; InAs0.25P0.75 seed membrane; InP; InP substrates; MBE; fully relaxed layers; paramorphic approach; Biomembranes; Buffer layers; Capacitive sensors; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface roughness;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850261
