Base current transient behavior in polyimide-passivated InP/InGaAs heterojunction bipolar transistors

Author

Wang, Hong ; Ng, Geok Ing ; McAlister, Sean P.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

fYear

2000

fDate

2000

Firstpage

193

Lastpage

196

Abstract

We have investigated a transient effect in the base current in polyimide passivated InP/InGaAs heterojunction bipolar transistors (HBTs) and its influence on the device characteristics. The trapping and detrapping of static charge in the polyimide at the polyimide/semiconductor interface is found to be the root cause of the base current transient. We have also found that the transient effect can be suppressed by post-process high-dose UV exposure

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; polymer films; ultraviolet lithography; InP-InGaAs; base current transient behavior; detrapping; device characteristics; polyimide; polyimide-passivated InP/InGaAs heterojunction bipolar transistors; post-process high-dose UV exposure; static charge; transient effect; trapping; Current measurement; Electrodes; Electrons; Etching; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Passivation; Polyimides;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850265

Filename

850265