Title :
RBS analysis of Au/Cr contact on GaAs
Author :
Pantelica, Dan ; Drafta, George ; Borcan, Cristina ; Diaconescu, Doha ; Buda, Manuela ; Ghita, R.
Author_Institution :
Inst. of Phys. & Nucl. Eng., Bucharest, Romania
Abstract :
This paper investigates the mass transport in Au/Cr contacts deposited on GaAs. Such contacts are commonly used as ohmic contacts on p-type GaAs. For characterisation we used the RBS technique, replacing the classical α particles with 7Li ions. This allows a great improvement in depth and mass resolution
Keywords :
III-V semiconductors; Rutherford backscattering; chemical interdiffusion; chromium; gallium arsenide; gold; ohmic contacts; semiconductor-metal boundaries; 7Li ions; Au-Cr-GaAs; Au/Cr contacts; GaAs; Li; RBS analysis; depth resolution; interdiffusion characterization; mass resolution; mass transport; ohmic contacts; p-type GaAs substrate; Chromium; Diode lasers; Energy resolution; Etching; Gallium arsenide; Gold; Ohmic contacts; Physics; Rapid thermal annealing; Rapid thermal processing;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557406
