• DocumentCode
    2123568
  • Title

    RBS analysis of Au/Cr contact on GaAs

  • Author

    Pantelica, Dan ; Drafta, George ; Borcan, Cristina ; Diaconescu, Doha ; Buda, Manuela ; Ghita, R.

  • Author_Institution
    Inst. of Phys. & Nucl. Eng., Bucharest, Romania
  • Volume
    2
  • fYear
    1996
  • fDate
    9-12 Oct 1996
  • Firstpage
    405
  • Abstract
    This paper investigates the mass transport in Au/Cr contacts deposited on GaAs. Such contacts are commonly used as ohmic contacts on p-type GaAs. For characterisation we used the RBS technique, replacing the classical α particles with 7Li ions. This allows a great improvement in depth and mass resolution
  • Keywords
    III-V semiconductors; Rutherford backscattering; chemical interdiffusion; chromium; gallium arsenide; gold; ohmic contacts; semiconductor-metal boundaries; 7Li ions; Au-Cr-GaAs; Au/Cr contacts; GaAs; Li; RBS analysis; depth resolution; interdiffusion characterization; mass resolution; mass transport; ohmic contacts; p-type GaAs substrate; Chromium; Diode lasers; Energy resolution; Etching; Gallium arsenide; Gold; Ohmic contacts; Physics; Rapid thermal annealing; Rapid thermal processing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1996., International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3223-7
  • Type

    conf

  • DOI
    10.1109/SMICND.1996.557406
  • Filename
    557406
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2123568