DocumentCode :
2123593
Title :
The Characterisation and Large-Signal Modelling of InGaAs Pseudomorphic High Electron Mobility Transistors
Author :
Cojocaru, Vicentiu I. ; Perry, Philip ; Brazil, Thomas J.
Author_Institution :
Department of Electonic and Electrical Engineenng, University College Dublin, Dublin 4, Ireland. Tel: +353-1-706 1908; Fax: +353-1-2830921; E-mail: vivi@hertzucd.ie
Volume :
2
fYear :
1994
fDate :
5-9 Sept. 1994
Firstpage :
1598
Lastpage :
1603
Abstract :
A high-performance pseudomorphic InGaAs/AIGaAs HEMT has been characterised from DC to microwave frequencies, using a powerful measurement-based parameter extraction methodology. This methodology has alreadt beea proved to work for conventional FET "on-wafer" structures [7] and uses DC and broad-band multi-bias point (CW) S-parameter measurements to determine all the elements of the equivalent circuit. This technique hast bees now developed to include a simple but efficient optimisation strategy, for extracting package-related parasitics. Accurate non-linear models for the gate capacitances and the drain-circuit elements are proposed, leading to an effective large-signal universal model for P-HEMT devices. The model is validated by comparing DC, small and large-signal experimental results with simulations performed with the HP-MDS simulator.
Keywords :
Electron mobility; Frequency measurement; HEMTs; Indium gallium arsenide; MODFETs; Microwave FETs; Microwave frequencies; Microwave measurements; Microwave transistors; PHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
Type :
conf
DOI :
10.1109/EUMA.1994.337446
Filename :
4138492
Link To Document :
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