DocumentCode
2123612
Title
Fabrication and characteristics of Pt/ZnO NO sensor integrated SiC micro heater
Author
Shim, Jae-Cheol ; Chung, Gwiy-Sang
Author_Institution
Sch. of Electr. Eng., Univ. of Ulsan, Ulsan, South Korea
fYear
2010
fDate
1-4 Nov. 2010
Firstpage
350
Lastpage
353
Abstract
This paper describes the fabrication and characteristics of a NO sensor using ZnO thin film integrated 3C-SiC micro heater based on 3C-SiC thin film of operation in harsh environments. Sensitivity, response time, and operating properties in high temperature and voltages of NO sensors based SiC MEMS are measured and analyzed. The sensitivity of device with pure ZnO thin film at the heater operating power of 13.5 mW (300°C) was 0.875 in NO gas concentration of 0.046 ppm. In the case of using the Pt added ZnO thin film, the sensitivity at power consumption of 5.9 mW (250°C) was 1.92 at same gas flow rate. Using the Pt added ZnO thin film was showed higher sensitivity, lower working temperature, and faster adsorption characteristics to NO gas than the pure ZnO thin film. The NO gas sensor integrated SiC micro heater is more strength than others in high voltage and temperature.
Keywords
II-VI semiconductors; gas sensors; microfabrication; microsensors; platinum; semiconductor thin films; silicon compounds; thin film sensors; wide band gap semiconductors; zinc compounds; MEMS; NO gas sensor; Pt-ZnO-SiC; faster adsorption characteristics; gas concentration; gas flow rate; power consumption; thin film integrated SiC microheater;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2010 IEEE
Conference_Location
Kona, HI
ISSN
1930-0395
Print_ISBN
978-1-4244-8170-5
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2010.5690244
Filename
5690244
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