• DocumentCode
    2123612
  • Title

    Fabrication and characteristics of Pt/ZnO NO sensor integrated SiC micro heater

  • Author

    Shim, Jae-Cheol ; Chung, Gwiy-Sang

  • Author_Institution
    Sch. of Electr. Eng., Univ. of Ulsan, Ulsan, South Korea
  • fYear
    2010
  • fDate
    1-4 Nov. 2010
  • Firstpage
    350
  • Lastpage
    353
  • Abstract
    This paper describes the fabrication and characteristics of a NO sensor using ZnO thin film integrated 3C-SiC micro heater based on 3C-SiC thin film of operation in harsh environments. Sensitivity, response time, and operating properties in high temperature and voltages of NO sensors based SiC MEMS are measured and analyzed. The sensitivity of device with pure ZnO thin film at the heater operating power of 13.5 mW (300°C) was 0.875 in NO gas concentration of 0.046 ppm. In the case of using the Pt added ZnO thin film, the sensitivity at power consumption of 5.9 mW (250°C) was 1.92 at same gas flow rate. Using the Pt added ZnO thin film was showed higher sensitivity, lower working temperature, and faster adsorption characteristics to NO gas than the pure ZnO thin film. The NO gas sensor integrated SiC micro heater is more strength than others in high voltage and temperature.
  • Keywords
    II-VI semiconductors; gas sensors; microfabrication; microsensors; platinum; semiconductor thin films; silicon compounds; thin film sensors; wide band gap semiconductors; zinc compounds; MEMS; NO gas sensor; Pt-ZnO-SiC; faster adsorption characteristics; gas concentration; gas flow rate; power consumption; thin film integrated SiC microheater;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2010 IEEE
  • Conference_Location
    Kona, HI
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-8170-5
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2010.5690244
  • Filename
    5690244