HEMT Noise Parameter Formulation by Using Intrinsic Noise Sources One by One

A new approach to noise parameter formulation is presented and applied to a HEMT equivalent circuit. The approach focuses in representing the noise parameters of the device as a combined result of considering intrinsic noise sources one by one. This provides insight into the contribution of each intrinsic noise source and expressions for relating their effect to the dominating components of the equivalent circuit. The approach suits best for use with the resistor temperaiture noise model. The effect of the main parasitic components as well as the need to differenatiate between the sources in the modelling of any experimenial HEMT device can be evaluated.