Title :
Pt/MoO3 nano-flower/SiC Schottky diode based hydrogen gas sensor
Author :
Shafiei, M. ; Yu, J. ; Breedon, M. ; Moafi, A. ; Kalantar-Zadeh, K. ; Wlodarski, W. ; Kaner, R.B. ; Galatsis, K.
Author_Institution :
Sch. of Electr. & Comput. Eng., RMIT Univ., Melbourne, VIC, Australia
Abstract :
In this paper, we report the development of a novel Pt/MoO3 nano-flower/SiC Schottky diode based device for hydrogen gas sensing applications. The MoO3 nanostructured thin films were deposited on SiC substrates via thermal evaporation. Morphological characterization of the nanostructured MoO3 by scanning electron microscopy revealed randomly orientated thin nanoplatelets in a densely packed formation of nano-flowers with dimensions ranging from 250 nm to 1 μm. Current-voltage characteristics of the sensor were measured at temperatures from 25°C to 250°C. The sensor showed greater sensitivity in a reverse bias condition than in forward bias. Dynamic response of the sensor was investigated towards different concentrations of hydrogen gas in a synthetic air mixture at 250°C and a large voltage shift of 5.7 V was recorded upon exposure to 1% hydrogen.
Keywords :
Schottky diodes; dynamic response; gas sensors; hydrogen; molybdenum compounds; platinum compounds; scanning electron microscopy; silicon compounds; Pt:MoO3; Schottky diode; SiC; current voltage characteristic; dynamic response; hydrogen gas sensor; nanoflower; nanostructured thin film; scanning electron microscopy; size 250 nm to 1 nm; temperature 25 degC to 250 degC; thermal evaporation; voltage 5.7 V;
Conference_Titel :
Sensors, 2010 IEEE
Conference_Location :
Kona, HI
Print_ISBN :
978-1-4244-8170-5
Electronic_ISBN :
1930-0395
DOI :
10.1109/ICSENS.2010.5690245
