Title :
MBE growth of van der Waals epitaxy using graphene buffer layer
Author :
Leung, Kin K. ; Wang, W. ; Hui, Y.Y. ; Wang, S.F. ; Fong, W.K. ; Lau, S.P. ; Lam, C.H. ; Surya, Charles
Author_Institution :
Dept. of Electron. & Inf. Eng., Hong Kong Polytech. Univ., Hong Kong, China
Abstract :
SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ~1 eV and a direct bandgap of ~1.25 eV with high absorption coefficient, α, of >104 cm-1 at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ~81 cm2V-1s-1 was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.
Keywords :
absorption coefficients; buffer layers; energy gap; epitaxial layers; grain size; graphene; hole mobility; molecular beam epitaxial growth; tin compounds; C; MBE growth; SnS; SnS van der Waals epitaxies; absorption coefficient; electron volt energy 1.5 eV; grain size; graphene buffer layer; hole mobility; indirect bandgap; lattice mismatch; photoabsorption measurements; rocking curve FWHM; Films; Gallium arsenide; Graphene; Lattices; Photonic band gap; Substrates;
Conference_Titel :
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4673-3036-7
DOI :
10.1109/ISNE.2013.6512273
