Temporally resolved growth of InP in the openings off-oriented from [110] direction

Author

Sun, Y. ; Messmer, E. Rodríguez ; Söderström, D. ; Jahan, D. ; Lourdudoss, S.

Author_Institution

Dept. of Electron., R. Inst. of Technol., Kista, Sweden

fYear

2000

fDate

2000

Firstpage

227

Lastpage

230

Abstract

Temporally resolved growth of InP on patterned substrates with opening off-oriented from [110] direction was studied by low pressure hydride vapour phase epitaxy system. Lateral overgrowth and vertical growth were analysed. The lateral growth rate was observed to be strongly dependent on the orientation of the openings. The maximum lateral growth rate was achieved at 30° and 60° off [110] direction. The vertical growth rate was relatively constant, independent of the opening orientation. The optimum lateral overgrowth condition of InP was explored, which may be used for heteroepitaxy of InP on Si

Keywords

III-V semiconductors; crystal orientation; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; InP; Si; [110] direction; lateral growth rate; lateral overgrowth; low pressure hydride vapour phase epitaxy; openings; patterned substrates; temporally resolved growth; vertical growth; Conducting materials; Epitaxial growth; Indium phosphide; Laboratories; Optical device fabrication; Scanning electron microscopy; Semiconductor materials; Silicon compounds; Substrates; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850273

Filename

850273