Title :
Temporally resolved growth of InP in the openings off-oriented from [110] direction
Author :
Sun, Y. ; Messmer, E. Rodríguez ; Söderström, D. ; Jahan, D. ; Lourdudoss, S.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Kista, Sweden
Abstract :
Temporally resolved growth of InP on patterned substrates with opening off-oriented from [110] direction was studied by low pressure hydride vapour phase epitaxy system. Lateral overgrowth and vertical growth were analysed. The lateral growth rate was observed to be strongly dependent on the orientation of the openings. The maximum lateral growth rate was achieved at 30° and 60° off [110] direction. The vertical growth rate was relatively constant, independent of the opening orientation. The optimum lateral overgrowth condition of InP was explored, which may be used for heteroepitaxy of InP on Si
Keywords :
III-V semiconductors; crystal orientation; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; InP; Si; [110] direction; lateral growth rate; lateral overgrowth; low pressure hydride vapour phase epitaxy; openings; patterned substrates; temporally resolved growth; vertical growth; Conducting materials; Epitaxial growth; Indium phosphide; Laboratories; Optical device fabrication; Scanning electron microscopy; Semiconductor materials; Silicon compounds; Substrates; Sun;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850273
