A GaAs LD Driver IC for a 2.5 Gb/s Optical Communication System

Author

Miyashita, M. ; Andoh, N. ; Nakano, H. ; Motoshima, K. ; Kebukawa, N. ; Shibao, S. ; Tanino, N.

Author_Institution

Mitsubishi Electric Corporation. 4-1, Mizuhara, Itami, Hyogo 664, Japan. Tel: +81 727 84 7384 Fax: +81 727 80 2694

Volume

2

fYear

1994

fDate

5-9 Sept. 1994

Firstpage

1649

Lastpage

1654

Abstract

A large modulation current laser-diode (LD) driver IC is developed using a GaAs self-aligned gate MESFET with a 0.8 Â¿m gate length for a 2.5 Gb/s optical communication system. The IC consists of a level shifter, a two-stage input buffer, a mark density monitor and a current driver. The current driver adjusts the modulation current over 50 mAp-p for a 25 Â¿ load using a current mirror circuit. The rise and fall times are 90 ps and 110 ps, respectively. This IC also has small deviation of Â±0.2% of the modulation current for the ambient temperature from Â¿20 Â°C to 80 Â°C. The dispersion penalty of a 100 km length transmission using 1.3 Â¿m zero-dispersion fiber with an optical transmitter consisting of this IC and a MQW DFB LD is less than 0.8 dB. The IC is suitable for the practical application to 2.5 Gb/s optical communication systems.

Keywords

Driver circuits; Gallium arsenide; MESFET integrated circuits; Mirrors; Monitoring; Optical buffering; Optical fiber communication; Optical transmitters; Photonic integrated circuits; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 1994. 24th European

Conference_Location

Cannes, France

Type

conf

DOI

10.1109/EUMA.1994.337455

Filename

4138501