Title :
A GaAs LD Driver IC for a 2.5 Gb/s Optical Communication System
Author :
Miyashita, M. ; Andoh, N. ; Nakano, H. ; Motoshima, K. ; Kebukawa, N. ; Shibao, S. ; Tanino, N.
Author_Institution :
Mitsubishi Electric Corporation. 4-1, Mizuhara, Itami, Hyogo 664, Japan. Tel: +81 727 84 7384 Fax: +81 727 80 2694
Abstract :
A large modulation current laser-diode (LD) driver IC is developed using a GaAs self-aligned gate MESFET with a 0.8 ¿m gate length for a 2.5 Gb/s optical communication system. The IC consists of a level shifter, a two-stage input buffer, a mark density monitor and a current driver. The current driver adjusts the modulation current over 50 mAp-p for a 25 ¿ load using a current mirror circuit. The rise and fall times are 90 ps and 110 ps, respectively. This IC also has small deviation of ±0.2% of the modulation current for the ambient temperature from ¿20 °C to 80 °C. The dispersion penalty of a 100 km length transmission using 1.3 ¿m zero-dispersion fiber with an optical transmitter consisting of this IC and a MQW DFB LD is less than 0.8 dB. The IC is suitable for the practical application to 2.5 Gb/s optical communication systems.
Keywords :
Driver circuits; Gallium arsenide; MESFET integrated circuits; Mirrors; Monitoring; Optical buffering; Optical fiber communication; Optical transmitters; Photonic integrated circuits; Temperature;
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
DOI :
10.1109/EUMA.1994.337455
