Title :
Demonstration of GSMBE grown InP-GaAs0.51Sb0.49 /InP DHBTs
Author :
Matine, N. ; Dvorak, M.W. ; Lam, S. ; Bolognesi, C.R. ; Houng, Y.M. ; Moll, N.
Author_Institution :
Dept. of Phys., Simon Fraser Univ., Burnaby, BC, Canada
Abstract :
We report the implementation of GSMBE-grown carbon-doped InP/GaAsSb/InP double heterojunction transistors (DHBTs). The devices exhibit significantly improved peak cutoff frequencies when compared to nominally identical MOCVD-grown epitaxial structures. We also show that InP/GaAsSb/InP DHBTs behave well under high power dissipation bias conditions
Keywords :
III-V semiconductors; carbon; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; semiconductor growth; GSMBE grown InP/GaAs0.51Sb0.49/InP DHBTs; InP-GaAs0.51Sb0.49; InP/GaAsSb/InP DHBTs; carbon-doped InP/GaAsSb/InP double heterojunction transistors; high power dissipation bias conditions; peak cutoff frequencies; Cutoff frequency; Double heterojunction bipolar transistors; Epitaxial layers; Fabrication; Gallium arsenide; Gold; Indium phosphide; Laboratories; Physics; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850276
