• DocumentCode
    2123859
  • Title

    Demonstration of GSMBE grown InP-GaAs0.51Sb0.49 /InP DHBTs

  • Author

    Matine, N. ; Dvorak, M.W. ; Lam, S. ; Bolognesi, C.R. ; Houng, Y.M. ; Moll, N.

  • Author_Institution
    Dept. of Phys., Simon Fraser Univ., Burnaby, BC, Canada
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    239
  • Lastpage
    242
  • Abstract
    We report the implementation of GSMBE-grown carbon-doped InP/GaAsSb/InP double heterojunction transistors (DHBTs). The devices exhibit significantly improved peak cutoff frequencies when compared to nominally identical MOCVD-grown epitaxial structures. We also show that InP/GaAsSb/InP DHBTs behave well under high power dissipation bias conditions
  • Keywords
    III-V semiconductors; carbon; chemical beam epitaxial growth; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; semiconductor growth; GSMBE grown InP/GaAs0.51Sb0.49/InP DHBTs; InP-GaAs0.51Sb0.49; InP/GaAsSb/InP DHBTs; carbon-doped InP/GaAsSb/InP double heterojunction transistors; high power dissipation bias conditions; peak cutoff frequencies; Cutoff frequency; Double heterojunction bipolar transistors; Epitaxial layers; Fabrication; Gallium arsenide; Gold; Indium phosphide; Laboratories; Physics; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
  • Conference_Location
    Williamsburg, VA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6320-5
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2000.850276
  • Filename
    850276
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2123859