• DocumentCode
    2123869
  • Title

    High Integrated MMIC Multifunctions for X Band Sensor Applications

  • Author

    Camiade, M. ; Serru, V.

  • Author_Institution
    THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES, RD 128 - BP 46 - 91401 ORSAY CEDEX - (FRANCE)
  • Volume
    2
  • fYear
    1994
  • fDate
    5-9 Sept. 1994
  • Firstpage
    1655
  • Lastpage
    1660
  • Abstract
    A set of single chip multifunctions has been developed at X band for sensor applications. This kind of circuits gathers all the necessary basic functions such as oscillators, buffer amplifiers, power dividers, modulators and mixers. The chosen technology is TCS standard process LN05 based on 0.5¿m implanted MESFET, via holes, air bridges and electron beam lithography. All of these circuits are working around 10GHz with more than 20% bandwidth. The transmitted output power is greater than lOdBm and the noise figure is better than 7.5dB SSB for an IF of 10MHz. The IF output can also be used at very low frequencies (from DC) and exhibits low noise with a typical value of ¿140dBm/Hz at IkHz.
  • Keywords
    Bandwidth; Bridge circuits; Electron beams; Integrated circuit technology; Lithography; MESFETs; MMICs; Oscillators; Power amplifiers; Power dividers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1994. 24th European
  • Conference_Location
    Cannes, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1994.337456
  • Filename
    4138502