Proper determination of tunnel model parameters for indirect band-to-band tunneling in compressively strained Si1−xGex TFETs

Tunnel field-effect transistor (TFET) has served as one of the most attractive candidates for use in future low-power integrated circuits. To explore the current-voltage characteristics of TFET devices, the Kane´s tunnel model has been widely used in numerical simulations and physical models to predict the tunneling current produced in the TFETs. This study examines the proper calculations of Kane´s model parameters appropriate for the indirect band-to-band tunneling generated in compressively strained Si_1-xGe_x channel on Si-substrate. The calculated parameters were verified with the measured results from experimental TFETs. Good agreements are confirmed between the numerical and measured data without any fitting factors.