Title :
An improved performance 62.7 GHz low power divide-by-16 InP-based HBT circuit
Author :
Elliott, K.R. ; Thomas, S. ; Brown, J. ; Kramer, A. ; Sokolich, M. ; Lui, M. ; Hitko, D.
Author_Institution :
HRL Lab., Malibu, CA, USA
Abstract :
We report improved static divider performance of 62.7 GHz maximum toggle frequency at power levels of 60 mW/flip-flop using a highly manufacturable AlInAs/GaInAs single heterojunction HBT on semi-insulating InP substrates. This improvement was made by reduction in collector-base capacitance and has been achieved with no apparent reduction in yield
Keywords :
III-V semiconductors; aluminium compounds; bipolar MIMIC; capacitance; flip-flops; frequency dividers; gallium arsenide; heterojunction bipolar transistors; indium compounds; 60 mW; 62.7 GHz; AlInAs-GaInAs; AlInAs/GaInAs single heterojunction HBT; InP; collector-base capacitance; flip-flop; low power divide-by-16 InP-based HBT circuit; maximum toggle frequency; power levels; semi-insulating InP substrates; static divider performance; yield; Capacitance; Circuit simulation; Clocks; Fabrication; Flip-flops; Frequency conversion; Frequency synthesizers; Heterojunction bipolar transistors; Indium phosphide; Sampling methods;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850277
