Title :
Distribution improvement for main impurity, oxygen and carbon concentration in Czochralski silicon single crystals
Author :
Vanca, V. ; Schlett, Z. ; Dinu, M. ; Enache, V.
Author_Institution :
MATPUR S.A., Bucharest, Romania
Abstract :
In order to improve the axial distribution for the main impurities, oxygen and carbon concentration, in Cz silicon single crystals, the authors have established a computer numerical method to reduce the scattering area for values along the ingot by using different pulling rates
Keywords :
carbon; crystal growth from melt; elemental semiconductors; impurity distribution; oxygen; semiconductor growth; silicon; Czochralski growth; Si:O,C; Si:O,C single crystals; axial distribution; computer numerical method; main impurity distribution; pulling rates; scattering area; Calculus; Crystallization; Equations; Impurities; Oxygen; Postal services; Processor scheduling; Silicon; Solids;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557409
