Title :
HBT MMIC 75 GHz and 78 GHz power amplifiers
Author :
Guthrie, J.R. ; Urteaga, M. ; Scott, D. ; Mensa, D. ; Mathew, T. ; Lee, Q. ; Krishnan, S. ; Jaganathan, S. ; Betser, Y. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report W band MMIC power amplifiers in an InGaAs/InAlAs HBT technology. A cascode amplifier with an emitter area of 100 μm2 and a total die size of 0.42×0.36 μm2 delivers 10 dBm at 75 GHz under 1.7 dB of gain compression. A balanced amplifier composed of two such cascode cells delivers 10.7 dBm at 78 GHz under 1 dB of gain compression. A common-base amplifier delivers 9.7 dBm at 82.5 GHz under 0.8 dB of gain compression. To the best of our knowledge, these results represent the best reported power performance at W band for HBT MMIC amplifiers
Keywords :
III-V semiconductors; aluminium compounds; bipolar MIMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit measurement; millimetre wave measurement; millimetre wave power amplifiers; 0.36 mum; 0.42 mum; 1 dB; 1.7 dB; 100 mum; 75 GHz; 78 GHz; HBT MMIC amplifiers; HBT MMIC power amplifiers; InGaAs-InAlAs; InGaAs/InAlAs HBT technology; W band; W band MMIC power amplifiers; balanced amplifier; cascode amplifier; cascode cells; common-base amplifier; emitter area; gain compression; power performance; total die size; Circuits; Dielectric thin films; Fingers; HEMTs; Heterojunction bipolar transistors; MMICs; MODFETs; Microstrip; Power amplifiers; Power generation;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850278
