DocumentCode
2123907
Title
Effect of SiO2 additive as inhibitor on crystalline structure and H2 S sensing performance of CuO-Au-SnO2 thin film prepared by liquid phase deposition
Author
Chiou, Jin-Chern ; Tsai, Shang-Wei ; Huang, Cheng-Tang
Author_Institution
Dept. of Electr. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear
2010
fDate
1-4 Nov. 2010
Firstpage
333
Lastpage
336
Abstract
In situ SiO2-doped SnO2 thin films have been prepared by liquid phase deposition method. The effect of SiO2 additive on the surface morphology and crystalline structural of the thin films were investigated by grazing incident angle X-ray diffraction (GIAXRD) and scanning electron microscopy (SEM). In the characteristics of sensing response, the SiO2-doped CuO Au-SnO2 gas sensors (Si/Sn = 0.25 and 0.33) have greater sensitivity and shorter response time than CuO-Au-SnO2 gas sensor. However, the doped CuO-Au-SnO2 gas sensors (Si/Sn = 0.33) can obtained better sensitivity (S = 67 for 2ppm) and response time (t90% <; 3 s).
Keywords
copper compounds; gas sensors; gold; liquid phase deposited coatings; silicon compounds; surface morphology; tin compounds; CuO-Au-SnO2:SiO2; GIAXRD; H2S; SEM; crystalline structure; gas sensor; grazing incident angle X-ray diffraction; inhibitor; liquid phase deposition method; scanning electron microscopy; surface morphology; thin film;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2010 IEEE
Conference_Location
Kona, HI
ISSN
1930-0395
Print_ISBN
978-1-4244-8170-5
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2010.5690256
Filename
5690256
Link To Document