Doping-restructuration process during phosphorus diffusion in polysilicon layers on silicon

Author

Gaiseanu, F. ; Kruger, D. ; Stoemenos, J. ; Dimitriadis, C.A. ; Postalache, C. ; Richter, H. ; Schröter, W. ; Seibt, M.

Author_Institution

Res. Inst. for Electron. Components (ICCE), Bucharest, Romania

Volume

2

fYear

1996

fDate

9-12 Oct 1996

Firstpage

421

Abstract

TEM, spreading resistance and SIMS investigations of LP-CVD polysilicon layers deposited at 620°C on a Si substrate, doped by P prediffusion at 900°C and subsequently annealed at temperatures in the range 900°C-1000°C, allow the authors to propose a doping-restructuration mechanism based on the self-interstitial injection during the P diffusion

Keywords

CVD coatings; annealing; diffusion; doping profiles; electrical resistivity; elemental semiconductors; interstitials; phosphorus; secondary ion mass spectra; semiconductor doping; semiconductor thin films; silicon; transmission electron microscopy; 620 C; 900 to 1000 C; LP-CVD polysilicon layers; P diffusion; P prediffusion; SIMS; Si; Si substrate; Si:P-Si; TEM; annealing; doping-restructuration process; self-interstitial injection; spreading resistance; Atomic layer deposition; Atomic measurements; Doping; Flyback transformers; Heterojunction bipolar transistors; Mass spectroscopy; Silicon; Strontium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1996., International

Conference_Location

Sinaia

Print_ISBN

0-7803-3223-7

Type

conf

DOI

10.1109/SMICND.1996.557410

Filename

557410