مرکز منطقه ای اطلاع رساني علوم و فناوري - A 0.5 watt-40% PAE InP double heterojunction bipolar transistor K-band MMIC power amplifier

DocumentCode :

2123946

Title :

A 0.5 watt-40% PAE InP double heterojunction bipolar transistor K-band MMIC power amplifier

Author :

Kobayashi, K.W. ; Oki, A.K. ; Yang, Li-W ; Gutierrez-Aitken, A. ; Chin, P. ; Sawdai, Don ; Okamura, W. ; Lester, J. ; Kaneshiro, E. ; Gorssman, P.C. ; Sato, K. ; Block, T.R. ; Yen, H.C. ; Streit, D.C.

Author_Institution :

TRW Electron., Redondo Beach, CA, USA

fYear :

2000

fDate :

2000

Firstpage :

250

Lastpage :

253

Abstract :

We report on the first InP DHBT K-band fully integrated power amplifier which achieves 0.5 Watts of output power and 40% power added efficiency (PAE). The power DHBTs obtain a BVceo >18 V and an f_T and f_max of 80 GHz and 160 GHz, respectively. The MMIC amplifier combines eight 1.5×30 μm² emitter fingers for a total periphery of 360 μm². At 21 GHz the MMIC power amplifier achieves a linear gain of 9.4 dB, output power of 27 dBm with a 40% PAE. The amplifier was operated under a Vce=5.5V and Jc=54 KA/cm ² and obtained a corresponding power density of 1.4 mW/μm ². To our knowledge this is the highest output power obtained for a fully monolithic-50-Ω-matched MMIC power amplifier based on InP HBT technology

Keywords :

III-V semiconductors; MMIC power amplifiers; bipolar MIMIC; bipolar MMIC; heterojunction bipolar transistors; indium compounds; integrated circuit measurement; millimetre wave measurement; millimetre wave power amplifiers; power bipolar transistors; 0.5 W; 1.5 mum; 160 GHz; 18 V; 21 GHz; 30 mum; 40 percent; 5.5 V; 50 ohm; 80 GHz; 9.4 dB; InP; InP DHBT K-band fully integrated power amplifier; InP HBT technology; InP double heterojunction bipolar transistor K-band MMIC power amplifier; MMIC amplifier; MMIC power amplifier; emitter fingers; linear gain; monolithic-50-Ω-matched MMIC power amplifier; output power; power DHBTs; power added efficiency; power density; Double heterojunction bipolar transistors; Fingers; Gain; Heterojunction bipolar transistors; High power amplifiers; Indium phosphide; K-band; MMICs; Power amplifiers; Power generation;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location :

Williamsburg, VA

ISSN :

1092-8669

Print_ISBN :

0-7803-6320-5

Type :

conf

DOI :

10.1109/ICIPRM.2000.850279

Filename :

850279

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2123946