DocumentCode :
2123958
Title :
Electrical and infrared absorption studies on La-silicate/Si interface
Author :
Seki, Takaya ; Kawanago, T. ; Kakushima, K. ; Ahmet, P. ; Kataoka, Yasuyuki ; Nishiyama, A. ; Sugii, Nobuyuki ; Tsutsui, K. ; Natori, K. ; Hattori, Toshihiro ; Iwai, Hisato
Author_Institution :
Frontier Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
fYear :
2013
fDate :
25-26 Feb. 2013
Firstpage :
55
Lastpage :
57
Abstract :
La-silicate/Si interface were investigated by measuring C-V characteristics and infra-red absorbance spectra. Interface state density (Dit) down to 1010 cm-2/eV was obtained by annealing at temperature over 800 °C. A red-shift due to Si-O-Si LO phonon toward 1250 cm-1 was found. We speculate that relaxation of SiO4 networks in La-silicates results in low Dit.
Keywords :
annealing; electronic density of states; elemental semiconductors; infrared spectra; interface states; lanthanum compounds; phonons; red shift; silicon; silicon-on-insulator; C-V characteristics; La silicate-Si interface; LaSiO4-Si; Si-O-Si LO phonon; annealing; infrared absorbance spectra; infrared absorption; interface state density; network relaxation; red-shift; Absorption; Annealing; Interface states; Phonons; Silicon; Substrates; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4673-3036-7
Type :
conf
DOI :
10.1109/ISNE.2013.6512286
Filename :
6512286
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2123958
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