Title :
Deep traps and brightness degradation for oxygen-rich concentration in ZnS:TbOF thin film electroluminescent devices
Author :
Wang, C.W. ; Sheu, T.J. ; Su, Y.K. ; Yokoyama, M.
Author_Institution :
Electron. Eng. Dept., Kaoshiung Polytech. Inst., Taiwan
Abstract :
The purpose of this work is to study the relationship between the oxygen-rich concentration and brightness degradation in ZnS:TbOF green A.C. thin-film electroluminescent devices. The results showed that higher oxygen-content (O/Tb>1) in the phosphor layer not only created the deep hole traps (Et1 and/or Et2) but also yielded the EL devices with moisture. As a result, lower brightness was obtained
Keywords :
II-VI semiconductors; brightness; deep levels; electroluminescent devices; hole traps; phosphors; terbium compounds; zinc compounds; AC thin film electroluminescent devices; ZnS:TbOF; brightness degradation; deep traps; hole traps; phosphor layer; Argon; Atomic layer deposition; Brightness; Degradation; Doping; Phosphors; Radio frequency; Transistors; Zinc compounds;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557412
