Title :
An investigation of deep electron trap at the different insulator-phosphor interfaces in ZnS:TbOF ACTFEL devices
Author :
Wang, C. Wen ; Sheu, T.J. ; Su, Y.K. ; Yokoyama, M.
Author_Institution :
Electron. Eng. Dept., Kaohsiung Polytech. Inst., Taiwan
Abstract :
Energy-resolved DLTS was utilized to measure the interface electron energy distribution at the insulator-semiconductor interface. The results showed that Ta2O5/ZnS:TbOF has shallower interface state energy distribution and higher averaged interface state density than SiO2/ZnS:TbOF
Keywords :
II-VI semiconductors; deep level transient spectroscopy; deep levels; electroluminescent devices; electron traps; interface states; phosphors; semiconductor-insulator boundaries; terbium compounds; zinc compounds; ACTFEL devices; ZnS:TbOF-SiO2; ZnS:TbOF-Ta2O5; averaged interface state density; deep electron traps; energy-resolved DLTS method; insulator-phosphor interfaces; insulator-semiconductor interface; interface electron energy distribution; interface state energy distribution; Electroluminescent devices; Electron traps; Energy measurement; Flat panel displays; Insulation; Interface states; Phosphors; Physics; Pulse measurements; Vehicles;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557413
