• DocumentCode
    2123983
  • Title

    An investigation of deep electron trap at the different insulator-phosphor interfaces in ZnS:TbOF ACTFEL devices

  • Author

    Wang, C. Wen ; Sheu, T.J. ; Su, Y.K. ; Yokoyama, M.

  • Author_Institution
    Electron. Eng. Dept., Kaohsiung Polytech. Inst., Taiwan
  • Volume
    2
  • fYear
    1996
  • fDate
    9-12 Oct 1996
  • Firstpage
    435
  • Abstract
    Energy-resolved DLTS was utilized to measure the interface electron energy distribution at the insulator-semiconductor interface. The results showed that Ta2O5/ZnS:TbOF has shallower interface state energy distribution and higher averaged interface state density than SiO2/ZnS:TbOF
  • Keywords
    II-VI semiconductors; deep level transient spectroscopy; deep levels; electroluminescent devices; electron traps; interface states; phosphors; semiconductor-insulator boundaries; terbium compounds; zinc compounds; ACTFEL devices; ZnS:TbOF-SiO2; ZnS:TbOF-Ta2O5; averaged interface state density; deep electron traps; energy-resolved DLTS method; insulator-phosphor interfaces; insulator-semiconductor interface; interface electron energy distribution; interface state energy distribution; Electroluminescent devices; Electron traps; Energy measurement; Flat panel displays; Insulation; Interface states; Phosphors; Physics; Pulse measurements; Vehicles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1996., International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3223-7
  • Type

    conf

  • DOI
    10.1109/SMICND.1996.557413
  • Filename
    557413
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2123983