Title :
Hole impact ionization coefficient in (100)-oriented In0.53 Ga0.47As based on pnp InAlAs/InGaAs HBTs
Author :
Buttari, D. ; Chini, A. ; Meneghesso, G. ; Zanoni, E. ; Sawdai, D. ; Pavlidis, D. ; Hsu, S.S.H.
Author_Institution :
Dipt. di Elettronica e Inf., Padova Univ., Italy
Abstract :
The hole multiplication factor in pnp In0.52Al0.48 As/In0.53Ga0.47As single heterojunction bipolar transistors (HBTs) has been measured as a function of the base-collector bias. The hole impact ionization coefficient βp has been estimated by taking into account the Early effect, the collector-base leakage current ICBO, thermal effects and the spread in the nominal device processing parameters. Numerical corrections for dead space and current-induced collector charge density variations were made. The data obtained in this way agree with the most recent photomultiplication measurements available in literature
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; impact ionisation; indium compounds; leakage currents; semiconductor device measurement; (100)-oriented In0.53Ga0.47As; Early effect; In0.52Al0.48As-In0.53Ga0.47 As; base-collector bias; collector-base leakage current; current-induced collector charge density variations; dead space; device processing parameters; hole impact ionization coefficient; hole multiplication factor; numerical corrections; pnp In0.52Al0.48As/In0.53Ga0.47 As single heterojunction bipolar transistors; pnp InAlAs/InGaAs HBT; thermal effects; Helium; Heterojunction bipolar transistors; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; Leakage current; Solid state circuits; Space charge; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850281
