Title :
Low-threshold and high-temperature characteristics of 1.3-μm InGaAlAs MQW lasers grown by metalorganic vapor-phase epitaxy
Author :
Tsuchiya, T. ; Takemoto, D. ; Sudou, T. ; Aoki, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We have investigated the growth conditions of the InGaAlAs MQW structure. After optimal growth, ridge-stripe InGaAlAs lasers had a very low threshold current at high temperature (13 mA, 85°C), a high characteristic temperature (91 K). Moreover, good reliability was obtained
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser reliability; optical fabrication; quantum well lasers; ridge waveguides; semiconductor device reliability; vapour phase epitaxial growth; waveguide lasers; 1.3 mum; 13 mA; 85 C; 91 K; InGaAlAs; MQW lasers; MQW structure; characteristic temperature; growth conditions; high-temperature characteristics; low-threshold characteristics; metalorganic vapor-phase epitaxy; optimal growth; reliability; ridge-stripe lasers; threshold current; Crystallization; Epitaxial growth; Indium phosphide; Laboratories; Photoluminescence; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850283
