• DocumentCode
    2124070
  • Title

    Experimental Comparison of Three Different Circuit Concepts for a Monolithic 10 Gb/s InP-Based Receiver-OEIC

  • Author

    Kaiser, D. ; Besca, F. ; Grobkopf, H. ; Grotjahn, F. ; Kuebart, W. ; Reemtsma, J.H. ; Gyuro, I.

  • Author_Institution
    Alcatel SEL Research Centre, Dep. Opto-Electronic Components ZFZ/WO, Lorenzstr. 10, D-70435 Stuttgart, Germany. Phone: +49 711 821 5837, Fax: +49 711 821 6355
  • Volume
    2
  • fYear
    1994
  • fDate
    5-9 Sept. 1994
  • Firstpage
    1703
  • Lastpage
    1708
  • Abstract
    Different circuit concepts for an InP-based 10 Gb/s monolithic front-end receiver-OEIC consisting of an InGaAs/InP pin-photodiode and InAlAs/InGaAs/InP-HEMTs are compared using on-wafer measurements. Small-signal and noise current measurements have been perforied on simple straightforward high impedance OEICs with two different terminations, gate-circuits with a source follower, and transimpedance-cascode circuits to characterise bandwidth, gain or responsivity, electrical output matching, and noise current. The latter reveal a medium input noise current of 13.5 pA/frU¿Hz for the transimpedance circuit, which is the lowest value ever reported for a monolithic 10 Gb/s-receiver-OEIC.
  • Keywords
    Bandwidth; Circuit noise; Diodes; HEMTs; Impedance; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Resistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1994. 24th European
  • Conference_Location
    Cannes, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1994.337464
  • Filename
    4138510
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2124070