Title :
Experimental Comparison of Three Different Circuit Concepts for a Monolithic 10 Gb/s InP-Based Receiver-OEIC
Author :
Kaiser, D. ; Besca, F. ; Grobkopf, H. ; Grotjahn, F. ; Kuebart, W. ; Reemtsma, J.H. ; Gyuro, I.
Author_Institution :
Alcatel SEL Research Centre, Dep. Opto-Electronic Components ZFZ/WO, Lorenzstr. 10, D-70435 Stuttgart, Germany. Phone: +49 711 821 5837, Fax: +49 711 821 6355
Abstract :
Different circuit concepts for an InP-based 10 Gb/s monolithic front-end receiver-OEIC consisting of an InGaAs/InP pin-photodiode and InAlAs/InGaAs/InP-HEMTs are compared using on-wafer measurements. Small-signal and noise current measurements have been perforied on simple straightforward high impedance OEICs with two different terminations, gate-circuits with a source follower, and transimpedance-cascode circuits to characterise bandwidth, gain or responsivity, electrical output matching, and noise current. The latter reveal a medium input noise current of 13.5 pA/frU¿Hz for the transimpedance circuit, which is the lowest value ever reported for a monolithic 10 Gb/s-receiver-OEIC.
Keywords :
Bandwidth; Circuit noise; Diodes; HEMTs; Impedance; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Resistors;
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
DOI :
10.1109/EUMA.1994.337464
