Title :
1.5 μm GaInAsP/InP double-quantum-well DFB lasers with deeply etched active regions
Author :
Nunoya, N. ; Nakamura, M. ; Yasumoto, H. ; Morshed, M. ; Fukuda, K. ; Tamura, S. ; Arai, S.
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
Low threshold 1.5 μm wavelength GaInAsP/InP double-quantum-well DFB lasers with deeply etched active regions were successfully fabricated by EB lithography, CH4/H2-RIE, and OMVPE regrowth. A record low threshold current density of 94 A/cm2 was obtained for a cavity length of 600 μm and the mesa-stripe width of 19.5 μm, while threshold current of 7 mA was obtained for a cavity length of 280 μm the threshold current dependence on both the cavity length and the active region width well agreed with theoretical results
Keywords :
III-V semiconductors; MOCVD; current density; distributed feedback lasers; electron beam lithography; etching; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser feedback; optical fabrication; quantum well lasers; sputter etching; vapour phase epitaxial growth; 1.5 mum; 19.5 mum; 280 mum; 600 mum; 7 mA; GaInAsP-InP; GaInAsP/InP; active region width; cavity length; deeply etched active regions; double-quantum-well DFB lasers; low threshold current density; mesa-stripe width; threshold current; threshold current dependence; Distributed feedback devices; Dry etching; Indium phosphide; Laser feedback; Laser theory; Semiconductor laser arrays; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Wire;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850284
