Title :
On the electron conduction in n-diamond
Author :
Hosoda, M. ; Kakushima, K. ; Natori, K. ; Yamasaki, Shintaro ; Ohashi, H. ; Iwai, Hisato
Author_Institution :
Frontier Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We have attempted to make a current density equation for n-diamond. By taking both band and nearest-neighbor hopping conductions into account, the resistivity of reported experimental data can be reconstructed. By introducing average mobility, which is a weighted average of each mobility, current density equation for n-diamond can be expressed.
Keywords :
conduction bands; current density; diamond; elemental semiconductors; hopping conduction; wide band gap semiconductors; C; average mobility; band conduction; current density equation; electron conduction; mobility weighted average; n-diamond; nearest-neighbor hopping conduction; Conductivity; Current density; Diamonds; Doping; Equations; Mathematical model; Temperature dependence;
Conference_Titel :
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4673-3036-7
DOI :
10.1109/ISNE.2013.6512290
