Title :
Effect of p-doping on the performance of high power 1.5-μm InGaAsP MQW lasers
Author :
Menna, R. ; Shterengas, L. ; Belenk, G. ; Trussell, W. ; Donetsky, D. ; Maiorov, M. ; Connolly, J. ; Garbuzov, D.
Author_Institution :
Sarnoff Corp., Princeton, NJ, USA
Abstract :
High power 1.5-μm InGaAsP/InP lasers with two different p-cladding doping profiles were fabricated and studied. Power saturation at high currents was observed. Experimental studies together with modeling results show that electron heterobarrier leakage limits the output power of 1.5-μm InGaAsP/InP lasers. A pulsed output power of 14 W was obtained from a 100 μm aperture laser with a doped p-cladding/SCH interface
Keywords :
III-V semiconductors; claddings; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; optical pulse generation; quantum well lasers; semiconductor doping; 1.5 mum; 100 mum; 14 W; InGaAsP; InGaAsP MQW lasers; InGaAsP-InP; InGaAsP/InP lasers; aperture laser; doped p-cladding/SCH interface; electron heterobarrier leakage; fabrication; high power MQW lasers; modeling results; output power; p-cladding doping profiles; p-doping; performance; power saturation; pulsed output power; Doping profiles; Laser modes; Optical pulses; Optical saturation; Optical sensors; Power generation; Power lasers; Quantum well devices; Semiconductor lasers; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850285
