The new generation of power semiconductor devices

Author

Amaratunga, Gehan A J ; Udea, F.

Author_Institution

Dept. of Electr. Eng. & Electron., Liverpool Univ., UK

Volume

2

fYear

1996

fDate

9-12 Oct 1996

Firstpage

469

Abstract

The next generation of power devices are likely to extend MOS controlled bipolar (MCB) device concepts to cover very high voltage (up to 6 kV) applications. Such devices will be based on utilising the advantages brought about by trench gate MOSFETs to control bipolar current flow. The semiconductor phenomena which can be accessed to optimise power device performance through use of trench gate MOS channels are discussed. Device structures which use PIN diode and thyristor type carrier distributions to reduce power loss within the device are presented. The next generation of power switching devices is proposed as being based on trench gate devices which have hybrid PIN diode and dynamic thyristor structures

Keywords

MOS-controlled thyristors; elemental semiconductors; insulated gate bipolar transistors; losses; p-i-n diodes; power semiconductor devices; silicon; 6 kV; MOS controlled bipolar devices; PIN diode; Si; VHV applications; power loss reduction; power semiconductor devices; power switching devices; thyristor type carrier distributions; trench gate MOS channels; trench gate devices; very high voltage applications; Cathodes; Equivalent circuits; Insulated gate bipolar transistors; MOSFETs; Power engineering and energy; Power generation; Power semiconductor devices; Solid state circuits; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1996., International

Conference_Location

Sinaia

Print_ISBN

0-7803-3223-7

Type

conf

DOI

10.1109/SMICND.1996.557421

Filename

557421