Title :
The improved optoelectronic characterization in annealed Al/AZO layer after sputtering
Author :
Wen-Kuan Lin ; Yi-Chuan Wang ; Wei-Che Huang ; Ze-Syue Wu ; Ci-Sheng Cai ; Yen-Sheng Lin ; Rehbach, Werner P.
Author_Institution :
Dept. of Electron. Eng., I-Shou Univ., Kaohsiung, Taiwan
Abstract :
In this study, the RF magnetron sputtering was used to deposit various thickness of Al and AZO thin film (ZnO: Al=98%:2%) on the glass substrate. The results showed that ZnO thin film has (002) preferred orientation crystal planes. When the thickness of metal conductive layer Aluminum is 5nm, the AZO/Al film has the best resistivity 6.17×10-4Ω. and the transmission is also maintained above 85%. The thin film crystallinity and conductivity were enhanced after 500 °C thermal annealing treatment.
Keywords :
II-VI semiconductors; aluminium; annealing; electrical conductivity; electrical resistivity; electro-optical effects; metallic thin films; semiconductor growth; semiconductor thin films; semiconductor-metal boundaries; sputter deposition; wide band gap semiconductors; zinc compounds; (002) preferred orientation crystal planes; AZO thin film thickness; AZO-Al film; Al thin film thickness; Al-ZnO:Al; RF magnetron sputtering; SiO2; ZnO thin film; annealed Al-AZO layer; glass substrate; improved optoelectronic characterization; metal conductive layer aluminum thickness; resistivity; temperature 500 degC; thermal annealing treatment; thin film conductivity; thin film crystallinity; Annealing; Conductivity; Metals; Optical films; Sputtering; Temperature measurement;
Conference_Titel :
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4673-3036-7
DOI :
10.1109/ISNE.2013.6512294
