DocumentCode
2124257
Title
Application of cathodoluminescence microscopy to the study of native acceptors in gallium antimonide
Author
Piqueras, J. ; Mendez, B. ; Panin, G.N. ; Dutta, P.S. ; Dieguez, E.
Author_Institution
Dept. de Fisica de Mater., Univ. Complutense de Madrid, Spain
Volume
2
fYear
1996
fDate
9-12 Oct 1996
Firstpage
497
Abstract
Cathodoluminescence in the scanning electron microscope is used to investigate growth and process induced defects in GaSb crystals. In particular, luminescence emission has been used to study the nature of acceptor defects present after different annealing and irradiation treatments
Keywords
III-V semiconductors; annealing; cathodoluminescence; crystal defects; gallium compounds; ion beam effects; scanning electron microscopy; GaSb; annealing; cathodoluminescence microscopy; defects; gallium antimonide crystal; growth; irradiation; native acceptors; scanning electron microscopy; Annealing; Atmosphere; Doping; Electron beams; Gallium compounds; Human computer interaction; Microscopy; Milling; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557426
Filename
557426
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