A microcontroller embedded with 4 Kbit ferroelectric non-volatile memory

Author

Fukushima, T. ; Kawahara, A. ; Nanba, T. ; Matsumoto, M. ; Nishimoto, T. ; Ikeda, N. ; Judai, Y. ; Sumi, T. ; Arita, Kazuki ; Otsuki, T.

Author_Institution

LSI Dev. Center, Matsushita Electron. Corp., Kyoto, Japan

fYear

1996

fDate

13-15 June 1996

Firstpage

46

Lastpage

47

Abstract

We have developed for the first time a 4-bit microcontroller (MCU) embedded with 4 Kbit ferroelectric non-volatile memory (FeRAM). The MCU integrating FeRAM demonstrates innovative characteristics such as high data storage speed. Low dissipation power and high endurance more than 10/sup 12/ cycles, neither of which has been realized with EEPROM and Flash EEPROM technology. The performances prove that the MCUs embedded with FeRAM will be one of "key" processors for multimedia devices such as PDA and cellular phone.

Keywords

ferroelectric storage; integrated circuit measurement; integrated circuit reliability; microcontrollers; random-access storage; 4 Kbit; 4 bit; MCU integrating FeRAM; data storage speed; dissipation power; endurance; ferroelectric nonvolatile memory; microcontroller; multimedia devices; Cellular phones; EPROM; Ferroelectric films; Ferroelectric materials; Microcontrollers; Nonvolatile memory; Random access memory;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-3339-X

Type

conf

DOI

10.1109/VLSIC.1996.507710

Filename

507710