Title :
The shorted anode BRT: a MOS-thyristor structure with improved turn-off performance
Author :
Flores, D. ; Jordà, X. ; Vellvehi, M. ; Fernández, J. ; Hidalgo, S. ; Rebollo, J. ; Millán, J.
Author_Institution :
Centro Nacional de Microelectronica, Univ. Autonoma de Barcelona, Spain
Abstract :
This paper analyzes the static and dynamic electrical characteristics of BRT devices fabricated on homogeneous wafers, including a shorted anode structure. The use of homogeneous substrates allows the implementation of a direct path between the N-drift region and the anode electrode. This allows a reduction of the transient losses and the turnoff time. The operation mode, the electrical characteristics and the switching behaviour of BRT devices with shorted have been analysed by means of 2D numerical simulations. The reduction of the transient losses has been corroborated experimentally by performing switching tests under resistive load
Keywords :
MOS-controlled thyristors; 2D numerical simulation; MOS-thyristor; electrical characteristics; homogeneous substrate; shorted anode BRT device; switching; transient loss; turnoff time; Anodes; Bipolar transistors; Breakdown voltage; Charge carrier processes; Electrodes; Fabrication; MOSFET circuits; Power MOSFET; Substrates; Thyristors;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557429
