Title :
High-efficiency 1.3 μm Fabry-Perot laser diode based on hydrogenated passive spot-size converter
Author :
Trégoat, D. ; Barthe, F. ; Berthier, P. ; Bordes, M. ; Colson, V. ; Gentner, J.L. ; Hubert, S. ; Leclerc, D. ; Gouezigou, L. Le ; Lestra, A. ; Rao, E.V.K. ; Tscherptner, N. ; Fernier, B.
Author_Institution :
Alcatel Corp. Res. Centre, France
Abstract :
We present recent developments on the fabrication process of Buried Ridge Stripe (BRS) Laser Diodes (LDs) integrated with a butt-coupled passive Spot Size Converter (SSC). Hydrogenation of the buried passive section has been successfully implemented on a 2-inch wafer technology. Hydrogenated SSC-BRS LDs exhibit excellent high temperature CW performances. Improvement of external efficiency (0.24 and 0.16 W/A respectively measured at 85°C on hydrogenated and as-grown 500 μm-long SSC devices) confirms that hydrogenation significantly reduces the free carrier optical absorption losses. Moreover, its long-term stability is demonstrated through 2000 hrs Automatic Power Control test
Keywords :
Fabry-Perot resonators; hydrogenation; semiconductor lasers; 2 inch; 85 C; automatic power control; buried ridge stripe Fabry-Perot laser diode; butt-coupled passive spot size converter; external efficiency; fabrication; free carrier optical absorption loss; high temperature CW operation; hydrogenation; stability; Absorption; Diode lasers; Fabry-Perot; Loss measurement; Optical device fabrication; Optical devices; Optical losses; Power control; Stability; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850293
