High-efficiency 1.3 μm Fabry-Perot laser diode based on hydrogenated passive spot-size converter

Author

Trégoat, D. ; Barthe, F. ; Berthier, P. ; Bordes, M. ; Colson, V. ; Gentner, J.L. ; Hubert, S. ; Leclerc, D. ; Gouezigou, L. Le ; Lestra, A. ; Rao, E.V.K. ; Tscherptner, N. ; Fernier, B.

Author_Institution

Alcatel Corp. Res. Centre, France

fYear

2000

fDate

2000

Firstpage

306

Lastpage

310

Abstract

We present recent developments on the fabrication process of Buried Ridge Stripe (BRS) Laser Diodes (LDs) integrated with a butt-coupled passive Spot Size Converter (SSC). Hydrogenation of the buried passive section has been successfully implemented on a 2-inch wafer technology. Hydrogenated SSC-BRS LDs exhibit excellent high temperature CW performances. Improvement of external efficiency (0.24 and 0.16 W/A respectively measured at 85°C on hydrogenated and as-grown 500 μm-long SSC devices) confirms that hydrogenation significantly reduces the free carrier optical absorption losses. Moreover, its long-term stability is demonstrated through 2000 hrs Automatic Power Control test

Keywords

Fabry-Perot resonators; hydrogenation; semiconductor lasers; 2 inch; 85 C; automatic power control; buried ridge stripe Fabry-Perot laser diode; butt-coupled passive spot size converter; external efficiency; fabrication; free carrier optical absorption loss; high temperature CW operation; hydrogenation; stability; Absorption; Diode lasers; Fabry-Perot; Loss measurement; Optical device fabrication; Optical devices; Optical losses; Power control; Stability; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850293

Filename

850293