DocumentCode
2124442
Title
MEDICI simulation of 6H-SiC oxide ramp profile (ORP) Schottky structure
Author
Brezeanu, G. ; Fernandez, J. ; Millan, J. ; Rebollo, J. ; Badila, M. ; Dilimot, G. ; Lungu, P.
Author_Institution
Politehnic Univ. of Bucharest, Romania
Volume
2
fYear
1996
fDate
9-12 Oct 1996
Firstpage
531
Abstract
A MEDICI simulation of 6H-SiC Schottky structure which uses the oxide ramp etching technique in order to attenuate edge effects is reported. The results of simulation show a uniform reverse current density and volume breakdown at Schottky structure with 300 V blocking voltage can be obtained for a maximum 5 degs, ramp angle of 1 μm oxide
Keywords
Schottky barriers; Schottky diodes; current density; electric breakdown; etching; power semiconductor diodes; semiconductor device models; semiconductor-metal boundaries; silicon compounds; simulation; wide band gap semiconductors; 300 V; 6H-SiC; MEDICI simulation; Ti-SiC; edge effects attenuation; oxide ramp etching technique; oxide ramp profile Schottky structure; uniform reverse current density; volume breakdown; Circuit simulation; Etching; Fabrication; Medical simulation; Rectifiers; Schottky diodes; Silicon carbide; Temperature; Thermal conductivity; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557433
Filename
557433
Link To Document