• DocumentCode
    2124490
  • Title

    A critical review of series resistances extraction methods in advanced bipolar transistors

  • Author

    Popescu, A.E. ; Ionescu, A.M. ; Rusu, A. ; Chovet, A. ; Steriu, D. ; Tudor, B.

  • Author_Institution
    Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
  • Volume
    2
  • fYear
    1996
  • fDate
    9-12 Oct 1996
  • Firstpage
    535
  • Abstract
    This paper gives a critical review of some of the most widely used series resistance extraction methods based essentially on static curves revealed by state-of-the-art bipolar transistors: polysilicon-emitter bipolar junction transistors (BJTs) with “normal” (Al) and TiSi2 contacts. An unusual current-dependence of series resistances in polysilicon emitter transistors is also reported
  • Keywords
    bipolar transistors; electric resistance measurement; elemental semiconductors; impact ionisation; silicon; Al contacts; Al-Si; TiSi2 contacts; TiSi2-Si; advanced bipolar transistors; bipolar junction transistors; current-dependence; impact ionisation method; polysilicon-emitter BJT; series resistances extraction methods; static curves; Bipolar transistors; Contact resistance; Current measurement; Electrical resistance measurement; Impact ionization; Insulation; Microelectronics; Q measurement; System testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1996., International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3223-7
  • Type

    conf

  • DOI
    10.1109/SMICND.1996.557435
  • Filename
    557435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2124490