Title :
MSIM2: mixed-signal short channel IGFET model for circuit simulations
Author :
Luo, H.J. ; Yeh, C.S. ; Hwang, K. ; Mendel, R.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
MSIM2 is a physical compact model specifically developed for mixed-signal and analog-intensive circuit simulations in deep sub-micron CMOS technologies. MSIM2 separates the drift and diffusion current components as continuous functions in all all operating regions, and shows superior accuracy and continuity in the subthreshold and moderate inversion regions even for second-order derivatives. It has full temperature scalability (-55°C to 150°C) and geometry scalability (down to 0.25 μm in W and L), and uses less parameters than other advanced models. MSIM2 also includes scalable charge and noise models, and has been verified against various processes from around the world
Keywords :
CMOS analogue integrated circuits; MOSFET; circuit analysis computing; electronic engineering computing; insulated gate field effect transistors; mixed analogue-digital integrated circuits; semiconductor device models; semiconductor device noise; -55 to 150 C; 0.25 micron; MSIM2; analog-intensive circuit simulations; circuit simulations; continuous functions; deep submicron CMOS technologies; diffusion current component; drift current component; geometry scalability; mixed-signal IGFET model; moderate inversion region; physical compact model; scalable charge model; scalable noise model; short channel IGFET model; subthreshold region; temperature scalability; Analog circuits; Capacitance; Circuit noise; Circuit simulation; Data mining; Geometry; Intrusion detection; MOSFET circuits; Scalability; Temperature;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557438
