InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems

Author

Ziegler, V. ; Gässler, C. ; Wölk, C. ; Berlec, F.-J. ; Deufel, R. ; Berg, M. ; Dickman, J. ; Schumacher, H. ; Alekseev, E. ; Pavlidis, D.

Author_Institution

Res. Center, DaimlerChrysler AG, Ulm, Germany

fYear

2000

fDate

2000

Firstpage

341

Lastpage

344

Abstract

In this paper, the performances of our InP-based and metamorphic HFETs are compared. Measurements on the RF as well as the noise behaviour are presented. Furthermore, first results are demonstrated on the integration of the InP-based PIN diode and HFET on one InP-substrate. Using these two devices, we integrated three different MMIC designs on one wafer: SPDT switch, phaseshifter and a combination of SPDT switch and LNA for a multifunctional MMIC

Keywords

III-V semiconductors; field effect MMIC; indium compounds; junction gate field effect transistors; millimetre wave field effect transistors; p-i-n diodes; InP; InP HFET; MM-wave communication system; PIN diode; RF characteristics; SPDT switch; low noise amplifier; metamorphic HFET; multifunctional MMIC; noise; phase shifter; Communication switching; HEMTs; Indium phosphide; Integrated circuit interconnections; MMICs; MODFETs; Radio frequency; Switches; Testing; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850302

Filename

850302