Title :
A comparison of channel indium content in low noise metamorphic HEMTs with InxGa1-xAs (0.3<X⩽0.6)
Author :
Whelan, C.S. ; Lardizabal, S.M. ; Buhles, P.M. ; Hoke, W.E. ; Marsh, P.F. ; McTaggart, R.A. ; McCarroll, C.P. ; Kazior, T.E.
Author_Institution :
Raytheon RF Components, Andover, MA, USA
Abstract :
GaAs metamorphic HEMTs promise to be the next generation of transistor technology to fill the emerging demand for high performance millimeter-wave low noise devices. This paper will present the first exploration of InGaAs HEMTs with various indium contents between 19% to 60%. Fmin and associated gain data from pHEMTs with 19% indium and MHEMTs with 33%, 43%, 53% and 60% indium channels will be presented
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor device noise; InxGa1-xAs metamorphic HEMT; InGaAs; channel indium content; low noise device; millimeter-wave transistor; Buffer layers; Costs; Etching; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; PHEMTs; mHEMTs;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850304
