• DocumentCode
    2124619
  • Title

    A comparison of channel indium content in low noise metamorphic HEMTs with InxGa1-xAs (0.3<X⩽0.6)

  • Author

    Whelan, C.S. ; Lardizabal, S.M. ; Buhles, P.M. ; Hoke, W.E. ; Marsh, P.F. ; McTaggart, R.A. ; McCarroll, C.P. ; Kazior, T.E.

  • Author_Institution
    Raytheon RF Components, Andover, MA, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    349
  • Lastpage
    352
  • Abstract
    GaAs metamorphic HEMTs promise to be the next generation of transistor technology to fill the emerging demand for high performance millimeter-wave low noise devices. This paper will present the first exploration of InGaAs HEMTs with various indium contents between 19% to 60%. Fmin and associated gain data from pHEMTs with 19% indium and MHEMTs with 33%, 43%, 53% and 60% indium channels will be presented
  • Keywords
    III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor device noise; InxGa1-xAs metamorphic HEMT; InGaAs; channel indium content; low noise device; millimeter-wave transistor; Buffer layers; Costs; Etching; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; PHEMTs; mHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
  • Conference_Location
    Williamsburg, VA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6320-5
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2000.850304
  • Filename
    850304
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2124619