DocumentCode :
2124707
Title :
Solution CBr4: an improved MOVPE dopant source
Author :
Rushworth, S.A. ; Smith, L.M. ; Blunt, R.T. ; Davies, J.I. ; Hunjan, S. ; Joel, A.
Author_Institution :
Epichem Ltd., Bromborough, UK
fYear :
2000
fDate :
2000
Firstpage :
361
Lastpage :
363
Abstract :
Carbon has been widely used as a p-type dopant in AlGaAs and InGaAs alloys due to its lower diffusion rate, higher solubility and lower memory effect than beryllium, magnesium and zinc. Carbon tetrabromide (CBr4) has become increasing favoured out of all the halocarbons identified as useful source materials for providing the high doping levels required for HBT´s. However consistent transport of this relatively involatile compound has been highlighted as problematic under normal operating conditions due to its solid nature. The optimum approach to improve dosimetry control of the other major solid MOVPE source, Trimethylindium (TMI), has been to dissolve it up in an extremely involatile solvent, resulting in solution TMITM. A similar methodology has been applied here in the case of CBr4. An investigation of the transport characteristics of solution CBr4 has been performed using an ultrasonic analyser to monitor the pick up of CBr4 vapours, and a comparison has been made with data for solid CBr4. Solution CBr4 has been used to dope a number of structures and improved reproducibility and control using this precursor has been demonstrated
Keywords :
organic compounds; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; AlGaAs; InGaAs; MOVPE dopant source; halocarbons; higher solubility; lower diffusion rate; lower memory effect; p-type dopant; solution CBr4; transport characteristics; Doping; Dosimetry; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Magnesium; Organic materials; Solids; Solvents; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
ISSN :
1092-8669
Print_ISBN :
0-7803-6320-5
Type :
conf
DOI :
10.1109/ICIPRM.2000.850307
Filename :
850307
Link To Document :
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