DocumentCode
2124762
Title
An experimental and numerical study of the composition distribution of InGaAsP quaternary materials in a horizontal MOCVD reactor
Author
Féron, O. ; Sugiyama, M. ; Nakano, Y. ; Shimogaki, Y.
Author_Institution
Dept. of Mater. Eng., Tokyo Univ., Japan
fYear
2000
fDate
2000
Firstpage
368
Lastpage
371
Abstract
A model was developed that enabled the simulation of composition and growth rate distributions of InGaAsP layers in a horizontal reactor. The model is based on kinetic data assessed by in-situ ellipsometry and FTIR spectrometry
Keywords
Fourier transform spectra; III-V semiconductors; MOCVD coatings; ellipsometry; gallium arsenide; gallium compounds; indium compounds; infrared spectra; semiconductor epitaxial layers; semiconductor growth; FTIR spectrometry; InGaAsP; InGaAsP quaternary materials; composition distribution; growth rate distributions; horizontal MOCVD reactor; in-situ ellipsometry; Composite materials; Ellipsometry; Gallium arsenide; Hydrogen; Inductors; Inorganic materials; Kinetic theory; MOCVD; Spectroscopy; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location
Williamsburg, VA
ISSN
1092-8669
Print_ISBN
0-7803-6320-5
Type
conf
DOI
10.1109/ICIPRM.2000.850309
Filename
850309
Link To Document