MOVPE growth of strained 1300 nm InGaAlAsP/InGaAsP quantum well structures

In this work we propose novel 1.3 μm InGaAlAsP/InGaAsP MQW laser structures designed for high-temperature operation. The effects of aluminium on the band offsets and carrier confinement in MQW structures have been investigated. Epitaxial structures exhibited very high photoluminescence (PL) and sharp satellites in high-resolution X-ray diffraction. The carrier transport issues were further investigated using femtosecond time-resolved PL. Broad area lasers exhibited values of threshold current density of 261 A/cm² per quantum well and a slope efficiency of 0.25 W/A. The observed T₀ values of 69 K for pure InGaAsP barriers increased to about 95 K for an Al content of about 12.5%, in accordance with expectations