Blue shift of multiple quantum wells induced by n-InP/p-InP/MQW structure

Author

Arakawa, S. ; Itoh, M. ; Yamanaka, N. ; Kasukawa, A.

Author_Institution

R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan

fYear

2000

fDate

2000

Firstpage

384

Lastpage

387

Abstract

A novel disordering technique of multiple quantum wells (MQWs) is realized by a layer structure consisted of n-InP/p-InP/GaInAsP MQW (λg=1.5 μm) grown by MOCVD. The emission wavelength of the MQW shifts to the shorter side under the existence of a n-InP cap layer. The energy shift becomes larger with increase of growth temperature and thickness of the n-InP cap, and reaches as large as 130 meV (1500 nm->1300 nm) at 650°C and 3000 nm, respectively. From the depth profile measured by secondary ion mass spectroscopy, interdiffusion of group V elements (As and P) between well and barrier is the origin of the blue shift

Keywords

III-V semiconductors; MOCVD; chemical interdiffusion; doping profiles; gallium arsenide; gallium compounds; indium compounds; photoluminescence; secondary ion mass spectra; semiconductor growth; semiconductor superlattices; spectral line shift; vapour phase epitaxial growth; 1300 to 1500 nm; 650 C; InP-GaInAsP; MOCVD; blue shift; depth profile; disordering; emission wavelength; group V elements; growth temperature; interdiffusion; layer structure; multiple quantum wells; n-InP cap layer; n-InP/p-InP/MQW structure; secondary ion mass spectroscopy; thickness; Indium phosphide; Inductors; MOCVD; Mass spectroscopy; Photonic band gap; Pulsed laser deposition; Quantum well devices; Substrates; Temperature; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850313

Filename

850313