DocumentCode
2124897
Title
Low-dimensional inhomogeneity of lattice of CdxHg1-xTe narrow-gap semiconductors
Author
Belogorokhov, A.L. ; Belogorokhova, L.L. ; Danilin, A.B. ; Liberant, L.M.
Author_Institution
Centre for Anal. of Substances, Moscow, Russia
Volume
2
fYear
1996
fDate
9-12 Oct 1996
Firstpage
571
Abstract
The infrared optical transmission and photosensitivity of doped, compensated, narrow-gap semiconductor material CdxHg1-x Te have been studied as functions of temperature under the same experimental conditions in the range from 5 K to 400 K. The strong anomalous changes in the position of the fundamental absorption edge and the maximum and relative photosensitivity of the material in the range 50 K to 65 K are accounted for by collective effects in disordered semiconductors. Potential-contrast scanning electron microscopy has been used to estimate the size of the p-type regions formed in the crystal at liquid nitrogen temperature
Keywords
II-VI semiconductors; cadmium compounds; infrared spectra; mercury compounds; narrow band gap semiconductors; scanning electron microscopy; thermo-optical effects; 5 to 400 K; CdxHg1-xTe; CdHgTe; collective effects; compensation; disordered semiconductors; doped; infrared optical transmission; lattice inhomogeneity; narrow-gap semiconductors; photosensitivity; potential-contrast scanning electron microscopy; temperature; Electromagnetic wave absorption; Electrons; Lattices; Mercury (metals); Optical materials; Optical surface waves; Plasma temperature; Semiconductor materials; Tellurium; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557448
Filename
557448
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