Does power devices sensitivity to mechanical stresses can be used as sensor for power assembly health monitoring?

Author

Capy, F. ; Azzopardi, S. ; El Boubkari, K. ; Belmehdi, Y. ; Deletage, J.-Y. ; Woirgard, E.

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence, France

fYear

2011

fDate

17-22 Sept. 2011

Firstpage

3879

Lastpage

3885

Abstract

The effect of mechanical stresses on planar Punch Through IGBT chips is investigated both by experiments and simulations. Experimental electrical characterizations under mechanical stresses are achieved with the help of a dedicated test bench and specific test vehicles. Furthermore, 2D and 3D finite elements electrical simulations under mechanical stresses are carried out on one hand to understand the device behavior by internal physics analysis and on the other hand to identify the most sensitive part of the chip to mechanical stress. The ultimate issue should lead to power assembly health monitoring by providing information on its mechanical state.

Keywords

finite element analysis; insulated gate bipolar transistors; integrated circuit testing; 2D finite elements electrical simulations; 3D finite elements electrical simulations; IGBT chips; health monitoring; internal physics analysis; mechanical stresses; planar punch; power assembly; power devices; test bench; test vehicles; Electron mobility; Finite element methods; Insulated gate bipolar transistors; Solid modeling; Tensile stress; Three dimensional displays; 2D and 3D finite elements simulation; IGBT; experiments; health monitoring; mechanical stresses; power assembly; static electrical characterization; strip bare dice;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2011 IEEE

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4577-0542-7

Type

conf

DOI

10.1109/ECCE.2011.6064296

Filename

6064296